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| Chip Schottky Barrier Diodes FM140-MH-1 Silicon epitaxial planer type Formosa MS SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.071(1.8) 0.055(1.4) 0.035(0.9) 0.028(0.7) 0.031(0.8) Typ. 0.031(0.8) Typ. Mechanical data Case : Molded plastic, JEDEC SOD-123H Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0393 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 25 0.5 10 Rq JA CJ TSTG -55 98 120 +150 o UNIT A A mA mA C/w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C *1 Repetitive peak reverse voltage SYMBOLS MARKING CODE 14 V RRM *1 V RMS *2 VR *3 VF *4 Operating temperature ( C) -55 to +125 o *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage (V) FM140-MH-1 40 (V) 28 (V) 40 (V) 0.45 RATING AND CHARACTERISTIC CURVES (FM140-MH-1) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CHARACTERISTICS 1.2 1.0 50 INSTANTANEOUS FORWARD CURRENT,(A) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 10 3.0 1.0 Tj=25 C Pulse Width 300us 1% Duty Cycle AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 25 0.1 PEAK FORWARD SURGE CURRENT,(A) 20 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 15 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method FORWARD VOLT AGE,(V) 10 5 FIG.5 - TYPICAL REVERSE 0 1 5 10 50 100 CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL JUNCTION CAPACITANCE 350 300 250 200 150 100 50 0 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) 10 1.0 Tj=75 C .1 Tj=25 C .01 .05 .1 .5 1 5 10 50 100 .01 0 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) |
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